Specification
FET Type 2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Rds On (Max) @ Id, Vgs 10.5 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) @ Vds 605pF @ 15V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)