Specification
FET Type MOSFET N-Channel, Schottky, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A (Ta)
Rds On (Max) @ Id, Vgs 14.5 mOhm @ 11.2A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) @ Vgs 31nC @ 10V
Input Capacitance (Ciss) @ Vds 1885pF @ 15V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)