FETs -Single, Arrays and Modules,10.6V,3mA, 1.3mA
Specification
FET Type N and P-Channel Complementary
Drain to Source Voltage (Vdss) 10.6V
Current - Continuous Drain (Id) @ 25°C 3mA, 1.3mA
Rds On (Max) @ Id, Vgs 1800 Ohm @ 5V
Vgs(th) (Max) @ Id 1V @ 1µA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 3pF @ 5V
Power - Max 500mW
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)