Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Rds On (Max) @ Id, Vgs 7 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 350pF @ 20V
Power - Max 30W
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack