Specification
FET Type 4 N-Channel
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Rds On (Max) @ Id, Vgs 700 mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.4W
Mounting Type -
Package / Case -