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Discrete Semiconductor Products
Diodes FETs
NE55410GR-AZ
NE55410GR-AZ
CALIFORNIA EASTERN LABORATORIES
Diodes FETs
NE55410 Series 65 V 2.14 GHz N-Channel Silicon Power LDMOS FET - HTSSOP-16
Datasheet
Specification
Transistor Type
LDMOS
Frequency
2.14GHz
Gain
13.5dB
Voltage - Test
28V
Current Rating
250mA, 1A
Noise Figure
-
Current - Test
20mA
Power - Output
35.4dBm
Voltage - Rated
65V
Package / Case
16-DFF, Exposed Pad
Quantity
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