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Home Category Discrete Semiconductor Products Diodes FETs NE3516S02-T1C-A
NE3516S02-T1C-A
CALIFORNIA EASTERN LABORATORIES
Diodes FETs
IC HJ-FET RF N-CH S02 4-MICROX
  Datasheet
Specification
Transistor Type N-Channel GaAs HJ-FET
Frequency 12GHz
Gain 14dB
Voltage - Test 2V
Current Rating 60mA
Noise Figure 0.35dB
Current - Test 10mA
Power - Output 165mW
Voltage - Rated 4V
Package / Case 4-SMD, Flat Leads


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