NE3512S02-A | CALIFORNIA EASTERN LABS

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Home Category Discrete Semiconductor Products Diodes FETs NE3512S02-A

NE3512S02-A

CALIFORNIA EASTERN LABORATORIES

Diodes FETs

HJ-FET NCH 13.5DB S02

Datasheet

Specification

Transistor Type	HFET
Frequency	12GHz
Gain	13.5dB
Voltage - Test	2V
Current Rating	70mA
Noise Figure	0.35dB
Current - Test	10mA
Power - Output	-
Voltage - Rated	4V
Package / Case	4-SMD, Flat Leads

                        
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