Contact Us    |

My Account

0 Items

0 Items

Home Category Discrete Semiconductor Products Diodes FETs NE3511S02-T1C-A
NE3511S02-T1C-A
CALIFORNIA EASTERN LABORATORIES
Diodes FETs
NE3511 Series 4 GHz L to S Band Low Noise Amplifier HJ-FET - ThinMiniMold-4
  Datasheet
Specification
Transistor Type HFET
Frequency 12GHz
Gain 13.5dB
Voltage - Test 2V
Current Rating 70mA
Noise Figure 0.3dB
Current - Test 10mA
Power - Output -
Voltage - Rated 4V
Package / Case 4-SMD, Flat Leads


 sales@componentbuy.com

Find Fast Easier
Tags
NewsLetter

Join Us

Invalid Email address

© 2016 Copyright