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Home Category Discrete Semiconductor Products Diodes FETs NE3508M04-T2-A
NE3508M04-T2-A
CALIFORNIA EASTERN LABORATORIES
Diodes FETs
Diodes - FETs,HFET,2GHz,2V,10mA
  Datasheet
Specification
Transistor Type HFET
Frequency 2GHz
Gain 14dB
Voltage - Test 2V
Current Rating 120mA
Noise Figure 0.45dB
Current - Test 10mA
Power - Output 18dBm
Voltage - Rated 4V
Package / Case SOT-343F


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