BLF4G22S-100,112 | NXP | Component Buy

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Home Category Discrete Semiconductor Products Diodes FETs BLF4G22S-100,112

BLF4G22S-100,112

NXP SEMICONDUCTORS

Diodes FETs

Diodes - FETs,LDMOS,2.11GHz ~ 2.17GHz,28V,900mA

Datasheet

Specification

Transistor Type	LDMOS
Frequency	2.11GHz ~ 2.17GHz
Gain	13.5dB
Voltage - Test	28V
Current Rating	12A
Noise Figure	-
Current - Test	900mA
Power - Output	25W
Voltage - Rated	65V
Package / Case	SOT-502B

                        
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