TRANSISTOR, GAAS, HI-LIN; Drain Source Voltage Vds:7V; Continuous Drain Current Id:300mA; Power Dissipation Pd:1W; Operating Frequency Min:50MHz; Operating Frequency Max:6GHz; RF Transistor Case:SOT-89; No. of Pins:4; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (16-Jun-2014
Specification
Transistor Type E-pHEMT
Frequency 900MHz
Gain 17.2dB
Voltage - Test 4V
Current Rating 300mA
Noise Figure 0.8dB
Current - Test 135mA
Power - Output 21.7dBm
Voltage - Rated 7V
Package / Case TO-243AA