TRANSISTOR, GAAS, HI-LIN; Drain Source Voltage Vds:7V; Continuous Drain Current Id:1A; Power Dissipation Pd:3W; Operating Frequency Min:50MHz; Operating Frequency Max:6GHz; RF Transistor Case:LPCC; No. of Pins:8; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (16-Jun-2014); Gain Bandwidth ft
Specification
Transistor Type pHEMT FET
Frequency 2GHz
Gain 14.8dB
Voltage - Test 4.5V
Current Rating 1A
Noise Figure 1.4dB
Current - Test 200mA
Power - Output 30dBm
Voltage - Rated 7V
Package / Case 8-LPCC