TRANSISTOR, GAAS, HI-LIN; Drain Source Voltage Vds:7V; Continuous Drain Current Id:1A; Power Dissipation Pd:2.25W; Operating Frequency Min:400MHz; Operating Frequency Max:3.9GHz; RF Transistor Case:SOT-89; No. of Pins:4; Operating Temperature Max:150°C; MSL:MSL 2 - 1 year; SVHC:No SVHC (16-Jun-2014
Specification
Transistor Type pHEMT FET
Frequency 2GHz
Gain 15.5dB
Voltage - Test 4.5V
Current Rating 1A
Noise Figure 1.1dB
Current - Test 280mA
Power - Output 29dBm
Voltage - Rated 7V
Package / Case TO-243AA