Diodes - BJT,NPN,25V,650MHz
Specification
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 25V
Frequency - Transition 650MHz
Noise Figure @ f -
Gain -
Power - Max 300mW
DC Current Gain (hFE) @ Ic, Vce 60 @ 4mA, 10V
Current - Collector (Ic) (Max) 50mA
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Buying Option 1
1
-
INR 323.3
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 323.3