Transistors - Bipolar (BJT) -Single & Arrays,PNP + Diode (Isolated),3.5A,20V
Specification
Transistor Type PNP + Diode (Isolated)
Current - Collector (Ic) (Max) 3.5A
Voltage - Collector Emitter Breakdown (Max) 20V
Vce Saturation (Max) @ Ib, Ic 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max) 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2A, 2V
Power - Max 3W
Frequency - Transition 180MHz
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad