Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.7A
Rds On (Max) @ Id, Vgs 25 mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 31.6nC @ 10V
Input Capacitance (Ciss) @ Vds 1678pF @ 15V
Power - Max 1.25W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)