Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9.3A (Ta)
Rds On (Max) @ Id, Vgs 12 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.6V @ 250µA
Gate Charge (Qg) @ Vgs 77.1nC @ 10V
Input Capacitance (Ciss) @ Vds 4600pF @ 15V
Power - Max 1.56W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)