Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Rds On (Max) @ Id, Vgs 180 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) @ Vgs 2.9nC @ 4.5V
Input Capacitance (Ciss) @ Vds 314pF @ 15V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-MLP