MOSFET, NP CH, 60V, 4.7A/3.9A, SO8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:1.25W; Transistor Case Style:SOIC; No. of Pins:8; Ope
Specification
FET Type N and P-Channel Complementary
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Rds On (Max) @ Id, Vgs 55 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 20.4nC @ 10V
Input Capacitance (Ciss) @ Vds 1063pF @ 30V
Power - Max 1.8W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 896.7
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 896.7
Buying Option 2
3
-
INR 27590.3
10
-
INR 23326.4
100
-
INR 19709.1
1000
-
INR 18422
2500
-
INR 17134.9
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Order Multiple:1
Price : 82770.9