Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 35V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta), 5.3A (Tc)
Rds On (Max) @ Id, Vgs 75 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 46nC @ 10V
Input Capacitance (Ciss) @ Vds 825pF @ 25V
Power - Max 2W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA