FET Type | MOSFET P-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 35V |
Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta), 5.3A (Tc) |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 2.4A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) @ Vgs | 46nC @ 10V |
Input Capacitance (Ciss) @ Vds | 825pF @ 25V |
Power - Max | 2W |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |