FET Type | MOSFET P-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta), 4A (Tc) |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 1.6A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) @ Vgs | 10.2nC @ 10V |
Input Capacitance (Ciss) @ Vds | 330pF @ 25V |
Power - Max | 2W |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |