Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs 150 mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 10.2nC @ 10V
Input Capacitance (Ciss) @ Vds 330pF @ 25V
Power - Max 2W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA