Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta)
Rds On (Max) @ Id, Vgs 8 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 25pF @ 25V
Power - Max 360mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3