Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 240V
Current - Continuous Drain (Id) @ 25°C 480mA (Ta)
Rds On (Max) @ Id, Vgs 9 Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 200pF @ 25V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA