FET Type | MOSFET P-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 50V |
Current - Continuous Drain (Id) @ 25°C | 175mA (Ta) |
Rds On (Max) @ Id, Vgs | 10 Ohm @ 100mA, 5V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) @ Vgs | - |
Input Capacitance (Ciss) @ Vds | 40pF @ 25V |
Power - Max | 625mW |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |