Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 710mA (Ta)
Rds On (Max) @ Id, Vgs 2 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 75pF @ 18V
Power - Max 2W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA