MOSFET, N, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:90mA; Drain Source Voltage Vds:450V; On Resistance Rds(on):50ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:700mW; Transistor Case Style:E-Line; No. of Pins:3; Operating Temperature Max:1
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 450V
Current - Continuous Drain (Id) @ 25°C 90mA (Ta)
Rds On (Max) @ Id, Vgs 50 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 70pF @ 25V
Power - Max 700mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Buying Option 1
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INR 945.5
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 945.5