Transistors - Bipolar (BJT) -Single & Arrays,NPN,4A,150V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 150V
Vce Saturation (Max) @ Ib, Ic 260mV @ 400mA, 4A
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 5V
Power - Max 1.2W
Frequency - Transition 90MHz
Mounting Type Through Hole
Package / Case E-Line-3