Transistors - Bipolar (BJT) -Single & Arrays,NPN,4A,10V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 10V
Vce Saturation (Max) @ Ib, Ic 185mV @ 10mA, 3A
Current - Collector Cutoff (Max) 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A, 2V
Power - Max 1W
Frequency - Transition 150MHz
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads