Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Rds On (Max) @ Id, Vgs 5 Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 40pF @ 10V
Power - Max 300mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3