Transistors - Bipolar (BJT) -Single & Arrays,NPN - Darlington,900mA,100V
Specification
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 900mA
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 960mV @ 5mA, 1A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V
Power - Max 625mW
Frequency - Transition 140MHz
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3