Diodes - BJT,NPN,12V,2GHz
Specification
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 2GHz
Noise Figure @ f 4.5dB @ 200MHz
Gain 15dB
Power - Max 330mW
DC Current Gain (hFE) @ Ic, Vce 25 @ 3mA, 1V
Current - Collector (Ic) (Max) 50mA
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Buying Option 1
1
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INR 41.18
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 41.18