Transistors - Bipolar (BJT) -Single & Arrays,NPN,1A,100V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 200mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 10V
Power - Max 625mW
Frequency - Transition 100MHz
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363