MOSFET,+SCH,N CH,30V,9.8A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:1.54W; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperat
Specification
FET Type MOSFET N-Channel, Schottky, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9.8A (Ta)
Rds On (Max) @ Id, Vgs 13 mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) @ Vgs 43nC @ 10V
Input Capacitance (Ciss) @ Vds 1849pF @ 15V
Power - Max 1.54W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
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INR 262.3
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 262.3