Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10.6A (Ta)
Rds On (Max) @ Id, Vgs 25 mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 31.6nC @ 10V
Input Capacitance (Ciss) @ Vds 1678pF @ 15V
Power - Max 2.15W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63