Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 770mA (Ta)
Rds On (Max) @ Id, Vgs 495 mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) @ Vgs 1.5nC @ 8V
Input Capacitance (Ciss) @ Vds 76.5pF @ 10V
Power - Max 430mW
Mounting Type Surface Mount
Package / Case 3-UFDFN