FET Type | MOSFET P-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
Rds On (Max) @ Id, Vgs | 54 mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) @ Vgs | 9.1nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 214pF @ 10V |
Power - Max | 530mW |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |