Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
Rds On (Max) @ Id, Vgs 18.6 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) @ Vgs 11.3nC @ 10V
Input Capacitance (Ciss) @ Vds 580pF @ 15V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-PowerVDFN