Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9.9A (Ta)
Rds On (Max) @ Id, Vgs 11 mOhm @ 12A, 20V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 20.5nC @ 10V
Input Capacitance (Ciss) @ Vds 2246pF @ 15V
Power - Max 1.45W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 402.6
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 402.6