Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta)
Rds On (Max) @ Id, Vgs 100 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) @ Vds 1425pF @ 10V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)