Transistors - Bipolar (BJT) -Single & Arrays,NPN - Pre-Biased,250mW
Specification
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 70mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 1mA, 5V
Power - Max 250mW
Frequency - Transition 250MHz
Mounting Type Surface Mount
Package / Case 3-XFDFN
Buying Option 1
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INR 244
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Order Multiple:1
Price : 244