Transistors - Bipolar (BJT) -Single & Arrays,PNP - Pre-Biased,150mW
Specification
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 700mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA, 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 10mA, 5V
Power - Max 150mW
Frequency - Transition 250MHz
Mounting Type Surface Mount
Package / Case SOT-523