Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 130mA (Ta)
Rds On (Max) @ Id, Vgs 10 Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 40pF @ 25V
Power - Max 360mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3