Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 120mA (Ta)
Rds On (Max) @ Id, Vgs 30 Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds -
Power - Max 500mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads