Transistors - Bipolar (BJT) -Single & Arrays,NPN,100mA,30V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 30V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 450 @ 2mA, 5V
Power - Max 310mW
Frequency - Transition 300MHz
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3