MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:330mW; Transistor Case Style:SOT-23; No. of Pins:3; Operating Temperature Ma
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta)
Rds On (Max) @ Id, Vgs 7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 50pF @ 25V
Power - Max 330mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
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INR 61
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Price : 61