MOSFET, N CH, 60V, 0.115A, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):13.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:200mW; Transistor Case Style:SOT-363; No. of Pins:6; Op
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 115mA
Rds On (Max) @ Id, Vgs 7.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 50pF @ 25V
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Buying Option 1
1
-
INR 201.3
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 201.3
Buying Option 2
10
-
INR 4349.3
50
-
INR 3916.2
250
-
INR 3458.7
1000
-
INR 3104.9
3000
-
INR 2897.5
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 43493