500mW,Power - Max
200MHz,Frequency - Transition
13 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
2SA608NG-NPA-AT ON SEMICONDUCTOR
PNP 150mA 50V 300mV @ 10mA, 100mA - 280 @ 1mA, 6V 500mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2SC5866TLQ ROHM CO LTD
NPN 2A 60V 500mV @ 100mA, 1A - 120 @ 100mA, 2V 500mW 200MHz Surface Mount TO-236-3, SC-59, SOT-23-3
2SC5866TLR ROHM CO LTD
NPN 2A 60V 500mV @ 100mA, 1A - 120 @ 100mA, 2V 500mW 200MHz Surface Mount TO-236-3, SC-59, SOT-23-3
PN2907A,116 NXP SEMICONDUCTORS
PNP 600mA 60V 1.6V @ 50mA, 500mA - 100 @ 150mA, 10V 500mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PN2907A,126 NXP SEMICONDUCTORS
PNP 600mA 60V 1.6V @ 50mA, 500mA - 100 @ 150mA, 10V 500mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2SA608NF-NPA-AT ON SEMICONDUCTOR
PNP 150mA 50V 300mV @ 10mA, 100mA - 160 @ 1mA, 6V 500mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2SC536NF-NPA-AT ON SEMICONDUCTOR
NPN 150mA 50V 300mV @ 10mA, 100mA - 160 @ 1mA, 6V 500mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2SC536NG-NPA-AT ON SEMICONDUCTOR
NPN 150mA 50V 300mV @ 10mA, 100mA - 280 @ 1mA, 6V 500mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2SD1620-TD-E ON SEMICONDUCTOR
NPN 3A 10V 400mV @ 60mA, 3A - 140 @ 3A, 2V 500mW 200MHz Surface Mount TO-243AA
QSX2TR ROHM CO LTD
NPN 5A 30V 250mV @ 40mA, 2A - 270 @ 500mA, 2V 500mW 200MHz Surface Mount SOT-23-6 Thin, TSOT-23-6