| Part Numbers | Manufacturer Name | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BC635,116 | NXP SEMICONDUCTORS | NPN | 1A | 45V | 500mV @ 50mA, 500mA | - | 63 @ 150mA, 2V | 830mW | 180MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| BC635-16,126 | NXP SEMICONDUCTORS | NPN | 1A | 45V | 500mV @ 50mA, 500mA | - | 100 @ 150mA, 2V | 830mW | 180MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| BC636,116 | NXP SEMICONDUCTORS | PNP | 1A | 45V | 500mV @ 50mA, 500mA | - | 63 @ 150mA, 2V | 830mW | 145MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| BC875,126 | NXP SEMICONDUCTORS | NPN - Darlington | 1A | 45V | 1.8V @ 1mA, 1A | 50nA | 2000 @ 500mA, 10V | 830mW | 200MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| BC635,112 | NXP SEMICONDUCTORS | NPN | 1A | 45V | 500mV @ 50mA, 500mA | - | 63 @ 150mA, 2V | 830mW | 180MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) |
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