Transistors Bipolar(BJT) Pre-biased, Single & Arrays| Component Buy

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NPN - Pre-Biased,Transistor Type

300mV @ 500µA, 10mA,Vce Saturation (Max) @ Ib, Ic

30 @ 5mA, 5V,DC Current Gain (hFE) (Min) @ Ic, Vce

Through Hole,Mounting Type

9 parts found

Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case

FJN3302RTA FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA 100nA (ICBO) 30 @ 5mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

FJN3305RTA FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA 100nA (ICBO) 30 @ 5mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

FJN3305RBU FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 30 @ 5mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN3302RBU FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 30 @ 5mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJNS3202RBU FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 30 @ 5mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 Short Body

FJNS3205RBU FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 30 @ 5mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 Short Body

FJNS3202RTA FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 30 @ 5mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

FJNS3205RTA FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 30 @ 5mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 Short Body Formed Leads

DTC114ESATP ROHM CO LTD

NPN - Pre-Biased 50mA 50V 300mV @ 500µA, 10mA 500nA 30 @ 5mA, 5V 300mW 250MHz Through Hole SC-72 Formed Leads

Part Numbers	Manufacturer Name	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Mounting Type	Package / Case
FJN3302RTA	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	100nA (ICBO)	30 @ 5mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
FJN3305RTA	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	100nA (ICBO)	30 @ 5mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
FJN3305RBU	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	30 @ 5mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN3302RBU	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	30 @ 5mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJNS3202RBU	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	30 @ 5mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 Short Body
FJNS3205RBU	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	30 @ 5mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 Short Body
FJNS3202RTA	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	30 @ 5mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
FJNS3205RTA	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	30 @ 5mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 Short Body Formed Leads
DTC114ESATP	ROHM CO LTD	NPN - Pre-Biased	50mA	50V	300mV @ 500µA, 10mA	500nA	30 @ 5mA, 5V	300mW	250MHz	Through Hole	SC-72 Formed Leads

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